IXA37IF1200HJ
IXYS
IXYS
IGBT 1200V 58A 195W TO247
$12.44
Available to order
Reference Price (USD)
30+
$9.55700
Exquisite packaging
Discount
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The IXA37IF1200HJ Single IGBT transistor by IXYS is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IXA37IF1200HJ ensures precise power control and long-term stability. With IXYS's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IXA37IF1200HJ into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 58 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
- Power - Max: 195 W
- Switching Energy: 3.8mJ (on), 4.1mJ (off)
- Input Type: Standard
- Gate Charge: 106 nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 35A, 27Ohm, 15V
- Reverse Recovery Time (trr): 350 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISOPLUS247™
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