SGF23N60UFTU
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$1.31
Available to order
Reference Price (USD)
360+
$2.05686
Exquisite packaging
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Optimize your power systems with the SGF23N60UFTU Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the SGF23N60UFTU delivers consistent and reliable operation. Trust Fairchild Semiconductor's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 23 A
- Current - Collector Pulsed (Icm): 92 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
- Power - Max: 75 W
- Switching Energy: 115µJ (on), 135µJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 17ns/60ns
- Test Condition: 300V, 12A, 23Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PF
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