IKD06N65ET6ARMA1
Infineon Technologies
Infineon Technologies
IKD06N65ET6ARMA1
$1.39
Available to order
Reference Price (USD)
1+
$1.39000
500+
$1.3761
1000+
$1.3622
1500+
$1.3483
2000+
$1.3344
2500+
$1.3205
Exquisite packaging
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The IKD06N65ET6ARMA1 by Infineon Technologies is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IKD06N65ET6ARMA1 delivers robust performance. Infineon Technologies's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IKD06N65ET6ARMA1 into your designs for optimal power control.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 9 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 3A
- Power - Max: 31 W
- Switching Energy: 60µJ (on), 30µJ (off)
- Input Type: Standard
- Gate Charge: 13.7 nC
- Td (on/off) @ 25°C: 15ns/35ns
- Test Condition: 400V, 3A, 47Ohm, 15V
- Reverse Recovery Time (trr): 30 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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