FGA15N120ANTDTU-F109
onsemi
onsemi
IGBT 1200V 30A 186W TO3P
$2.79
Available to order
Reference Price (USD)
1+
$2.91000
10+
$2.62000
450+
$2.05816
900+
$1.85657
1,350+
$1.58074
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the FGA15N120ANTDTU-F109 Single IGBT transistor by onsemi, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the FGA15N120ANTDTU-F109 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the FGA15N120ANTDTU-F109 for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT and Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
- Power - Max: 186 W
- Switching Energy: 3mJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 15ns/160ns
- Test Condition: 600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): 330 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
Related Products
Rohm Semiconductor
RGW00TS65GC11
IXYS
IXGH40N120C3
Rohm Semiconductor
RGTH00TK65GC11
Microchip Technology
APT75GN60SDQ2G
Infineon Technologies
IRG4BC30SPBF-INF
Alpha & Omega Semiconductor Inc.
AOB10B60D
onsemi
HGTG27N120BN
Fairchild Semiconductor
HGTP12N60A4
Microchip Technology
APT68GA60LD40
STMicroelectronics