HGTG27N120BN
onsemi
onsemi
IGBT NPT 1200V 72A TO247-3
$6.52
Available to order
Reference Price (USD)
1+
$6.84000
10+
$6.14400
450+
$4.77602
900+
$4.28551
1,350+
$3.61429
Exquisite packaging
Discount
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Upgrade your power management systems with the HGTG27N120BN Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the HGTG27N120BN provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose HGTG27N120BN for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 72 A
- Current - Collector Pulsed (Icm): 216 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 27A
- Power - Max: 500 W
- Switching Energy: 2.2mJ (on), 2.3mJ (off)
- Input Type: Standard
- Gate Charge: 270 nC
- Td (on/off) @ 25°C: 24ns/195ns
- Test Condition: 960V, 27A, 3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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