HGTP12N60A4
Fairchild Semiconductor
Fairchild Semiconductor
UFS SERIES N-CH IGBT
$0.67
Available to order
Reference Price (USD)
1+
$0.67000
500+
$0.6633
1000+
$0.6566
1500+
$0.6499
2000+
$0.6432
2500+
$0.6365
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HGTP12N60A4 Single IGBT transistor by Fairchild Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The HGTP12N60A4 ensures precise power control and long-term stability. With Fairchild Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate HGTP12N60A4 into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 54 A
- Current - Collector Pulsed (Icm): 96 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
- Power - Max: 167 W
- Switching Energy: 55µJ (on), 50µJ (off)
- Input Type: Standard
- Gate Charge: 78 nC
- Td (on/off) @ 25°C: 17ns/96ns
- Test Condition: 390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
Related Products
Microchip Technology
APT68GA60LD40
STMicroelectronics
STGP20V60F
Microchip Technology
APT35GA90B
Rohm Semiconductor
RGS30TSX2DGC11
Infineon Technologies
AIGB40N65H5ATMA1
IXYS
IXXX300N60C3
onsemi
AFGHL75T65SQDC
IXYS
IXBH16N170A
IXYS
MMIX1X200N60B3H1
Infineon Technologies