STGW30NC60KD
STMicroelectronics
STMicroelectronics
IGBT 600V 60A 200W TO247
$7.76
Available to order
Reference Price (USD)
1+
$6.87000
30+
$5.89633
120+
$5.16867
510+
$4.46524
1,020+
$3.83460
2,520+
$3.67290
Exquisite packaging
Discount
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Upgrade your power management systems with the STGW30NC60KD Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the STGW30NC60KD provides reliable and efficient operation. STMicroelectronics's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose STGW30NC60KD for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 125 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
- Power - Max: 200 W
- Switching Energy: 350µJ (on), 435µJ (off)
- Input Type: Standard
- Gate Charge: 96 nC
- Td (on/off) @ 25°C: 29ns/120ns
- Test Condition: 480V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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