RJK0603DPN-A0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 60V 80A TO220ABA
$3.12
Available to order
Reference Price (USD)
1+
$3.12000
500+
$3.0888
1000+
$3.0576
1500+
$3.0264
2000+
$2.9952
2500+
$2.964
Exquisite packaging
Discount
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Meet the RJK0603DPN-A0#T2 by Renesas Electronics America Inc, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The RJK0603DPN-A0#T2 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Renesas Electronics America Inc.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 125W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220ABA
- Package / Case: TO-220-3
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