RM120N30DF
Rectron USA
Rectron USA
MOSFET N-CHANNEL 30V 120A 8DFN
$0.38
Available to order
Reference Price (USD)
1+
$0.38000
500+
$0.3762
1000+
$0.3724
1500+
$0.3686
2000+
$0.3648
2500+
$0.361
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the RM120N30DF single MOSFET from Rectron USA. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RM120N30DF combines cutting-edge technology with Rectron USA's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.35mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerVDFN
Related Products
Alpha & Omega Semiconductor Inc.
AO3435
Toshiba Semiconductor and Storage
TK25A60X5,S5X
Rohm Semiconductor
RQ5E015RPTL
Panjit International Inc.
PJQ2461-AU_R1_000A1
Nexperia USA Inc.
GAN041-650WSBQ
Diodes Incorporated
DMN1004UFV-7
Infineon Technologies
IRFR3709ZTRPBF
IXYS
IXFP18N65X2M
Vishay Siliconix
SI7850DP-T1-GE3
Vishay Siliconix