RM130N200HD
Rectron USA
Rectron USA
MOSFET N-CH 200V 132A TO263-2
$3.84
Available to order
Reference Price (USD)
1+
$3.84000
500+
$3.8016
1000+
$3.7632
1500+
$3.7248
2000+
$3.6864
2500+
$3.648
Exquisite packaging
Discount
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Enhance your electronic projects with the RM130N200HD single MOSFET from Rectron USA. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Rectron USA's RM130N200HD for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 429W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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