RM17N800HD
Rectron USA
Rectron USA
MOSFET N-CH 800V 17A TO263-2
$1.53
Available to order
Reference Price (USD)
1+
$1.53000
500+
$1.5147
1000+
$1.4994
1500+
$1.4841
2000+
$1.4688
2500+
$1.4535
Exquisite packaging
Discount
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Enhance your electronic projects with the RM17N800HD single MOSFET from Rectron USA. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Rectron USA's RM17N800HD for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 260W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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