RM1A4N150S6
Rectron USA
Rectron USA
MOSFET N-CH 150V 1.4A SOT23-6
$0.18
Available to order
Reference Price (USD)
1+
$0.18000
500+
$0.1782
1000+
$0.1764
1500+
$0.1746
2000+
$0.1728
2500+
$0.171
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the RM1A4N150S6 single MOSFET from Rectron USA. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Rectron USA's RM1A4N150S6 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Tc)
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
Related Products
Nexperia USA Inc.
BUK6D22-30EX
Microchip Technology
APT30M19JVR
Infineon Technologies
BSP613PH6327XTSA1
Fairchild Semiconductor
FDPF16N50UT
IXYS
IXFX64N60Q3
Linear Integrated Systems, Inc.
3N163 DIE
Diodes Incorporated
DMNH6021SPSWQ-13
Diodes Incorporated
DMN2058UW-13
STMicroelectronics
STF8NK100Z
Rectron USA