RM4N700S4
Rectron USA

Rectron USA
MOSFET N-CH 700V 4A SOT223-2
$0.32
Available to order
Reference Price (USD)
1+
$0.32000
500+
$0.3168
1000+
$0.3136
1500+
$0.3104
2000+
$0.3072
2500+
$0.304
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the RM4N700S4 from Rectron USA, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the RM4N700S4 ensures reliable performance in demanding environments. Upgrade your circuit designs with Rectron USA's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 304 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-2
- Package / Case: TO-261-3