RN1104MFV,L3XHF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q NPN Q1BSR=47K, Q1BER=
$0.35
Available to order
Reference Price (USD)
1+
$0.35000
500+
$0.3465
1000+
$0.343
1500+
$0.3395
2000+
$0.336
2500+
$0.3325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Toshiba Semiconductor and Storage presents the RN1104MFV,L3XHF(CT a game-changer in pre-biased transistor technology. The device's thermal shutdown protection and 5kV ESD rating make it perfect for harsh environments like oil/gas monitoring and agricultural machinery. Its 1.5V low saturation voltage enhances energy efficiency in portable electronics and wearables.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
Related Products
Rohm Semiconductor
DTC114TKAT146
Toshiba Semiconductor and Storage
RN1309,LF
Rohm Semiconductor
DTA114GKAT146
Toshiba Semiconductor and Storage
RN2410,LXHF
Rohm Semiconductor
DTC014YEBTL
Panasonic Electronic Components
UNR31AMG0L
Toshiba Semiconductor and Storage
RN1413,LXHF
Infineon Technologies
BCR192E6327HTSA1
Comchip Technology
DTA123YCA-HF
Rohm Semiconductor