RN1510(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.3W SMV
$0.45
Available to order
Reference Price (USD)
1+
$0.45000
500+
$0.4455
1000+
$0.441
1500+
$0.4365
2000+
$0.432
2500+
$0.4275
Exquisite packaging
Discount
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Enhance your electronic projects with Toshiba Semiconductor and Storage's RN1510(TE85L,F), a high-reliability pre-biased BJT array. This discrete semiconductor solution offers matched transistor pairs with integrated bias networks, ensuring optimal performance in amplification and switching tasks. The RN1510(TE85L,F) is perfect for use in audio equipment, power supplies, and automotive control systems. With Toshiba Semiconductor and Storage's rigorous quality control, each array provides long-term stability and minimal distortion. Compact, efficient, and easy to integrate, the RN1510(TE85L,F) is the go-to choice for engineers seeking dependable transistor solutions.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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