RN1701,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K
$0.31
Available to order
Reference Price (USD)
1+
$0.31000
500+
$0.3069
1000+
$0.3038
1500+
$0.3007
2000+
$0.2976
2500+
$0.2945
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the RN1701,LF by Toshiba Semiconductor and Storage, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the RN1701,LF excels in automotive systems, power management modules, and communication devices. Toshiba Semiconductor and Storage's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose RN1701,LF for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
Related Products
Rohm Semiconductor
UMH1NTN
Diodes Incorporated
DDA114TU-7-F
Toshiba Semiconductor and Storage
RN4905,LF(CT
Diodes Incorporated
ADA114YUQ-13
Toshiba Semiconductor and Storage
RN1910FE,LF(CT
Toshiba Semiconductor and Storage
RN4989FE,LF(CT
Toshiba Semiconductor and Storage
RN4905,LXHF(CT
Toshiba Semiconductor and Storage
RN1502(TE85L,F)
Rohm Semiconductor
UMD5NTR
Toshiba Semiconductor and Storage