RN1910FE,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.1W ES6
$0.28
Available to order
Reference Price (USD)
4,000+
$0.04830
8,000+
$0.04200
12,000+
$0.03570
28,000+
$0.03360
100,000+
$0.02800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with Toshiba Semiconductor and Storage's RN1910FE,LF(CT, a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The RN1910FE,LF(CT is widely used in lighting systems, portable electronics, and automotive accessories. Toshiba Semiconductor and Storage's innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the RN1910FE,LF(CT is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
Related Products
Toshiba Semiconductor and Storage
RN4989FE,LF(CT
Toshiba Semiconductor and Storage
RN4905,LXHF(CT
Toshiba Semiconductor and Storage
RN1502(TE85L,F)
Rohm Semiconductor
UMD5NTR
Toshiba Semiconductor and Storage
RN4911FE,LXHF(CT
onsemi
NSBC123TDP6T5G
Diodes Incorporated
DDC123JH-7
Toshiba Semiconductor and Storage
RN1905,LXHF(CT
Toshiba Semiconductor and Storage
RN1903FE,LXHF(CT
Nexperia USA Inc.