RN1901FETE85LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.1W ES6
$0.40
Available to order
Reference Price (USD)
4,000+
$0.07004
8,000+
$0.06090
12,000+
$0.05177
28,000+
$0.04872
100,000+
$0.04060
Exquisite packaging
Discount
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Upgrade your electronic designs with the RN1901FETE85LF by Toshiba Semiconductor and Storage, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the RN1901FETE85LF excels in automotive systems, power management modules, and communication devices. Toshiba Semiconductor and Storage's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose RN1901FETE85LF for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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