RN2308,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 50V 0.1A USM
$0.18
Available to order
Reference Price (USD)
1+
$0.18000
500+
$0.1782
1000+
$0.1764
1500+
$0.1746
2000+
$0.1728
2500+
$0.171
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with Toshiba Semiconductor and Storage's RN2308,LF, a pre-biased BJT transistor engineered for efficiency. This single bipolar transistor features optimized current gain and minimal leakage, perfect for low-power circuits. Its compact package suits space-constrained applications like IoT devices, automotive modules, and power management systems. Toshiba Semiconductor and Storage delivers superior discrete semiconductor solutions meeting rigorous industry standards for durability and performance.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
Related Products
Rohm Semiconductor
DTC144ECAHZGT116
Nexperia USA Inc.
PDTD143EQAZ
Rohm Semiconductor
DTA114EMT2L
Rohm Semiconductor
DTA114EUBHZGTL
Rohm Semiconductor
DTA143TU3T106
Infineon Technologies
BCR108WH6433XTMA1
onsemi
MUN5113T1G
Diodes Incorporated
DDTA114YE-7-F
Diotec Semiconductor
MMBTRC110SS
Nexperia USA Inc.