RN4911,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PNP + NPN BRT Q1BSR4.7KOHM Q1BER
$0.05
Available to order
Reference Price (USD)
1+
$0.04876
500+
$0.0482724
1000+
$0.0477848
1500+
$0.0472972
2000+
$0.0468096
2500+
$0.046322
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN4911,LF(CT from Toshiba Semiconductor and Storage represents the pinnacle of pre-biased BJT array technology. Designed for high-density circuits, this product features low on-resistance and fast switching speeds, ideal for digital and analog applications. Its robust construction ensures reliable operation in telecommunications, computing, and industrial machinery. Toshiba Semiconductor and Storage's expertise in semiconductor manufacturing guarantees that the RN4911,LF(CT meets the highest industry standards. Whether you're designing advanced control systems or simple electronic switches, this transistor array offers unparalleled performance and versatility.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz, 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
Related Products
Rohm Semiconductor
UMA3NTR
Toshiba Semiconductor and Storage
RN1909,LXHF(CT
onsemi
NSBA143EDXV6T1
Nexperia USA Inc.
PUMD3,165
Panasonic Electronic Components
DMC564000R
Toshiba Semiconductor and Storage
RN1903,LF(CT
Toshiba Semiconductor and Storage
RN4902FE,LXHF(CT
Rohm Semiconductor
EMF5T2R
NXP USA Inc.
PBLS1503V,115
onsemi