RN4911(T5L,F,T)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.2W US6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Toshiba Semiconductor and Storage's RN4911(T5L,F,T), a premium pre-biased BJT array that combines innovation with practicality. This transistor array is optimized for low-voltage applications, offering high gain and minimal distortion. Its compact footprint and integrated bias network make it perfect for wearable devices, smart home systems, and medical instruments. Toshiba Semiconductor and Storage's dedication to excellence ensures that the RN4911(T5L,F,T) meets the most demanding specifications. With superior ESD protection and long-term stability, this product is a must-have for modern electronic designs.
Specifications
- Product Status: Obsolete
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
Related Products
Panasonic Electronic Components
UP0111300L
Toshiba Semiconductor and Storage
RN1910FE(T5L,F,T)
Panasonic Electronic Components
DMG964060R
Nexperia USA Inc.
PUMH2/DG/B4X
Infineon Technologies
BCR 116S H6727
Panasonic Electronic Components
DMA2610F0R
Nexperia USA Inc.
PEMF21,115
onsemi
NSB1706DMW5T1
Panasonic Electronic Components
DMG964H10R
Nexperia USA Inc.