RND030N20TL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 200V 3A CPT3
$0.81
Available to order
Reference Price (USD)
2,500+
$0.28565
Exquisite packaging
Discount
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Meet the RND030N20TL by Rohm Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The RND030N20TL stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Rohm Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 870mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 5.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 850mW (Ta), 20W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: CPT3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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