RS1L120GNTB
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 60V 12A/36A 8HSOP
$1.83
Available to order
Reference Price (USD)
1+
$1.83000
500+
$1.8117
1000+
$1.7934
1500+
$1.7751
2000+
$1.7568
2500+
$1.7385
Exquisite packaging
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The RS1L120GNTB by Rohm Semiconductor is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Rohm Semiconductor for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12.7mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
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