RS3E180ATTB1
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 30V 18A 8SOP
$2.88
Available to order
Reference Price (USD)
1+
$2.88000
500+
$2.8512
1000+
$2.8224
1500+
$2.7936
2000+
$2.7648
2500+
$2.736
Exquisite packaging
Discount
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Meet the RS3E180ATTB1 by Rohm Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The RS3E180ATTB1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Rohm Semiconductor.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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