RSH065N06GZETB
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 60V 6.5A 8SOP
$1.36
Available to order
Reference Price (USD)
1+
$1.36000
500+
$1.3464
1000+
$1.3328
1500+
$1.3192
2000+
$1.3056
2500+
$1.292
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the RSH065N06GZETB by Rohm Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The RSH065N06GZETB stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Rohm Semiconductor.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
- Vgs (Max): 20V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
SIR580DP-T1-RE3
Infineon Technologies
BSS119NH6327XTSA1
Infineon Technologies
SPB04N50C3
STMicroelectronics
STE53NC50
Infineon Technologies
SPB42N03S2L-13
onsemi
MVGSF1N03LT1G
STMicroelectronics
STI4N62K3
IXYS
IXTH360N055T2
IXYS
IXFH94N30T
STMicroelectronics