RSJ451N04FRATL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 40V 45A LPTS
$2.68
Available to order
Reference Price (USD)
1,000+
$1.04110
2,000+
$1.00520
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the RSJ451N04FRATL by Rohm Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the RSJ451N04FRATL is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
IRFBF20PBF-BE3
Microchip Technology
APT8015JVFR
Panjit International Inc.
PJD60R390E_L2_00001
Vishay Siliconix
SISS10DN-T1-GE3
Fairchild Semiconductor
FQI4N20TU
Infineon Technologies
IPB123N10N3GATMA1
Infineon Technologies
IAUT200N08S5N023ATMA1
Vishay Siliconix
SIR5708DP-T1-RE3
Vishay Siliconix
SQ4410EY-T1_BE3
onsemi