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RZF013P01TL

Rohm Semiconductor
RZF013P01TL Preview
Rohm Semiconductor
MOSFET P-CH 12V 1.3A TUMT3
$0.52
Available to order
Reference Price (USD)
3,000+
$0.09000
6,000+
$0.08500
15,000+
$0.07750
30,000+
$0.07250
75,000+
$0.07000
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads

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