TSM024NA04LCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 40V 170A 8PDFN
$1.54
Available to order
Reference Price (USD)
2,500+
$0.65198
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TSM024NA04LCR RLG by Taiwan Semiconductor Corporation is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Taiwan Semiconductor Corporation for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4224 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerTDFN
Related Products
Alpha & Omega Semiconductor Inc.
AO6401A
Torex Semiconductor Ltd
XP152A12C0MR
onsemi
FQB34N20TM-AM002
Nexperia USA Inc.
PMN30ENEAX
Infineon Technologies
IPD65R380E6
STMicroelectronics
STB30NF10T4
Rohm Semiconductor
RTQ045N03HZGTR
Vishay Siliconix
SI1022R-T1-GE3
GaNPower
GPIHV30SB5L
Nexperia USA Inc.