SCH2825-TL-E
onsemi
onsemi
MOSFET N-CH 30V 1.6A 6SCH
$0.12
Available to order
Reference Price (USD)
1+
$0.12000
500+
$0.1188
1000+
$0.1176
1500+
$0.1164
2000+
$0.1152
2500+
$0.114
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SCH2825-TL-E by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SCH2825-TL-E stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 800mA, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 600mW (Ta)
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-SCH
- Package / Case: 6-SMD, Flat Leads
Related Products
IXYS
IXTP6N100D2
IXYS
IXTH60N20L2
Panjit International Inc.
PJQ4466AP-AU_R2_000A1
Toshiba Semiconductor and Storage
2SJ305TE85LF
Vishay Siliconix
SIHH14N65E-T1-GE3
onsemi
NTD5804NT4G
Fairchild Semiconductor
FDS6694
onsemi
FCMT180N65S3
STMicroelectronics
STB34N65M5
Vishay Siliconix