SCT2080KEC
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 40A TO247
$24.82
Available to order
Reference Price (USD)
1+
$22.56000
10+
$20.80800
25+
$19.87320
100+
$17.76880
360+
$16.95050
Exquisite packaging
Discount
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Enhance your electronic projects with the SCT2080KEC single MOSFET from Rohm Semiconductor. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Rohm Semiconductor's SCT2080KEC for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
- Vgs(th) (Max) @ Id: 4V @ 4.4mA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 262W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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