STWA30N65DM6AG
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 28A TO247
$6.65
Available to order
Reference Price (USD)
1+
$6.65000
500+
$6.5835
1000+
$6.517
1500+
$6.4505
2000+
$6.384
2500+
$6.3175
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the STWA30N65DM6AG single MOSFET from STMicroelectronics. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust STMicroelectronics's STWA30N65DM6AG for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 284W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
Related Products
Rohm Semiconductor
QS5U28TR
Infineon Technologies
IPD096N08N3GATMA1
onsemi
NTD4810N-1G
Fairchild Semiconductor
SFU9224TU
Rohm Semiconductor
RQ5E040AJTCL
Fairchild Semiconductor
FDI9409-F085
Texas Instruments
CSD16327Q3T
Infineon Technologies
IPB024N08N5ATMA1
Infineon Technologies
IPP050N10NF2SAKMA1
onsemi