SCT2280KEC
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 14A TO247
$11.02
Available to order
Reference Price (USD)
1+
$10.02000
10+
$9.05200
25+
$8.63040
100+
$7.49380
360+
$7.15700
720+
$6.52550
1,080+
$5.89400
Exquisite packaging
Discount
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The SCT2280KEC from Rohm Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SCT2280KEC offers the precision and reliability you need. Trust Rohm Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V
- Vgs(th) (Max) @ Id: 4V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 108W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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