SIHB21N80AE-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 17.4A D2PAK
$3.04
Available to order
Reference Price (USD)
1+
$3.04000
500+
$3.0096
1000+
$2.9792
1500+
$2.9488
2000+
$2.9184
2500+
$2.888
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the SIHB21N80AE-GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SIHB21N80AE-GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 32W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
SIHA25N50E-E3
STMicroelectronics
STP150N3LLH6
Fairchild Semiconductor
HUFA75344S3
onsemi
SCH2825-TL-E
IXYS
IXTP6N100D2
IXYS
IXTH60N20L2
Panjit International Inc.
PJQ4466AP-AU_R2_000A1
Toshiba Semiconductor and Storage
2SJ305TE85LF
Vishay Siliconix
SIHH14N65E-T1-GE3
onsemi