SCT3105KW7TL
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 23A TO263-7
$16.38
Available to order
Reference Price (USD)
1+
$16.38000
500+
$16.2162
1000+
$16.0524
1500+
$15.8886
2000+
$15.7248
2500+
$15.561
Exquisite packaging
Discount
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Meet the SCT3105KW7TL by Rohm Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SCT3105KW7TL stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Rohm Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 125W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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