SGB02N120ATMA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 6.2A 62W TO263-3
$1.53
Available to order
Reference Price (USD)
1,000+
$1.00774
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SGB02N120ATMA1 Single IGBT transistor by Infineon Technologies is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the SGB02N120ATMA1 provides consistent performance in varied conditions. Rely on Infineon Technologies's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Last Time Buy
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 6.2 A
- Current - Collector Pulsed (Icm): 9.6 A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
- Power - Max: 62 W
- Switching Energy: 220µJ
- Input Type: Standard
- Gate Charge: 11 nC
- Td (on/off) @ 25°C: 23ns/260ns
- Test Condition: 800V, 2A, 91Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
Related Products
STMicroelectronics
STGW30NC60VD
Infineon Technologies
IKP06N60TXKSA1
Infineon Technologies
IHW30N120R5XKSA1
STMicroelectronics
STGP19NC60S
Infineon Technologies
IKP40N65H5XKSA1
Fairchild Semiconductor
FGA3060ADF
STMicroelectronics
STGB30NC60KT4
IXYS
IXA33IF1200HB
IXYS
IXGK320N60B3
IXYS