IHW30N120R5XKSA1
Infineon Technologies
Infineon Technologies
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$3.87
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Reference Price (USD)
240+
$2.95188
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Upgrade your power management systems with the IHW30N120R5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IHW30N120R5XKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IHW30N120R5XKSA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
- Power - Max: 330 W
- Switching Energy: 1.1mJ (off)
- Input Type: Standard
- Gate Charge: 235 nC
- Td (on/off) @ 25°C: -/330ns
- Test Condition: 600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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