IKZ50N65ES5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 80A TO247-4
$7.04
Available to order
Reference Price (USD)
1+
$6.51000
10+
$5.85100
240+
$4.79400
720+
$4.08106
1,200+
$3.44186
Exquisite packaging
Discount
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Upgrade your power management systems with the IKZ50N65ES5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IKZ50N65ES5XKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IKZ50N65ES5XKSA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
- Power - Max: 274 W
- Switching Energy: 770µJ (on), 880µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 36ns/294ns
- Test Condition: 400V, 25A, 23.1Ohm, 15V
- Reverse Recovery Time (trr): 62 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4
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