RJH1BF6RDPQ-80#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT
$7.68
Available to order
Reference Price (USD)
1+
$7.68000
500+
$7.6032
1000+
$7.5264
1500+
$7.4496
2000+
$7.3728
2500+
$7.296
Exquisite packaging
Discount
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The RJH1BF6RDPQ-80#T2 by Renesas Electronics America Inc is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the RJH1BF6RDPQ-80#T2 delivers robust performance. Renesas Electronics America Inc's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate RJH1BF6RDPQ-80#T2 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1100 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
- Power - Max: 227.2 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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