STGW60H65DRF
STMicroelectronics
STMicroelectronics
IGBT 650V 120A 420W TO247
$5.45
Available to order
Reference Price (USD)
1+
$9.40000
30+
$8.09333
120+
$7.02742
510+
$6.11939
1,020+
$5.32980
Exquisite packaging
Discount
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The STGW60H65DRF Single IGBT transistor by STMicroelectronics is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The STGW60H65DRF ensures precise power control and long-term stability. With STMicroelectronics's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate STGW60H65DRF into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
- Power - Max: 420 W
- Switching Energy: 940µJ (on), 1.06mJ (off)
- Input Type: Standard
- Gate Charge: 217 nC
- Td (on/off) @ 25°C: 85ns/178ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): 19 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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