RGS00TS65EHRC11
Rohm Semiconductor
Rohm Semiconductor
8US SHORT-CIRCUIT TOLERANCE, 650
$10.10
Available to order
Reference Price (USD)
1+
$10.10000
500+
$9.999
1000+
$9.898
1500+
$9.797
2000+
$9.696
2500+
$9.595
Exquisite packaging
Discount
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Upgrade your power management systems with the RGS00TS65EHRC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the RGS00TS65EHRC11 provides reliable and efficient operation. Rohm Semiconductor's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose RGS00TS65EHRC11 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 88 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 326 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 58 nC
- Td (on/off) @ 25°C: 36ns/115ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 113 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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