FGH60T65SHD-F155
onsemi
onsemi
IGBT TRENCH/FS 650V 120A TO247
$5.95
Available to order
Reference Price (USD)
1+
$6.35000
10+
$5.70300
450+
$4.43318
900+
$3.97788
1,350+
$3.35484
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FGH60T65SHD-F155 from onsemi is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose FGH60T65SHD-F155 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
- Power - Max: 349 W
- Switching Energy: 1.69mJ (on), 630µJ (off)
- Input Type: Standard
- Gate Charge: 102 nC
- Td (on/off) @ 25°C: 26ns/87ns
- Test Condition: 400V, 60A, 6Ohm, 15V
- Reverse Recovery Time (trr): 34.6 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
IXYS
IXA4I1200UC-TRL
IXYS
IXYP50N65C3
STMicroelectronics
STGFW20V60F
Fairchild Semiconductor
FGB40N6S2
Infineon Technologies
IKW40N60DTPXKSA1
STMicroelectronics
STGB19NC60KT4
Rohm Semiconductor
RGS00TS65HRC11
Infineon Technologies
IGB20N60H3ATMA1
STMicroelectronics
STGB30H60DLLFBAG
STMicroelectronics