IKWH30N65WR6XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH
$3.43
Available to order
Reference Price (USD)
1+
$3.43000
500+
$3.3957
1000+
$3.3614
1500+
$3.3271
2000+
$3.2928
2500+
$3.2585
Exquisite packaging
Discount
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Optimize your power systems with the IKWH30N65WR6XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IKWH30N65WR6XKSA1 delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 67 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
- Power - Max: 136 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 97 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-32
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