STGW10M65DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
$2.06
Available to order
Reference Price (USD)
1+
$1.86000
10+
$1.67000
100+
$1.34190
500+
$1.10250
1,200+
$0.91350
3,600+
$0.85050
6,000+
$0.84000
Exquisite packaging
Discount
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Enhance your electronic projects with the STGW10M65DF2 Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the STGW10M65DF2 ensures precision and reliability. STMicroelectronics's cutting-edge technology guarantees a component that meets the highest industry standards. Choose STGW10M65DF2 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
- Power - Max: 115 W
- Switching Energy: 120µJ (on), 270µJ (off)
- Input Type: Standard
- Gate Charge: 28 nC
- Td (on/off) @ 25°C: 19ns/91ns
- Test Condition: 400V, 10A, 22Ohm, 15V
- Reverse Recovery Time (trr): 96 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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