RGW50TS65GC11
Rohm Semiconductor
Rohm Semiconductor
650V 25A FIELD STOP TRENCH IGBT
$4.74
Available to order
Reference Price (USD)
1+
$4.74000
500+
$4.6926
1000+
$4.6452
1500+
$4.5978
2000+
$4.5504
2500+
$4.503
Exquisite packaging
Discount
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Discover the RGW50TS65GC11 Single IGBT transistor by Rohm Semiconductor, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the RGW50TS65GC11 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the RGW50TS65GC11 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
- Power - Max: 156 W
- Switching Energy: 390µJ (on), 430µJ (off)
- Input Type: Standard
- Gate Charge: 73 nC
- Td (on/off) @ 25°C: 35ns/102ns
- Test Condition: 400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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