HGTP5N120BND
onsemi
onsemi
IGBT 1200V 21A 167W TO220AB
$1.64
Available to order
Reference Price (USD)
800+
$1.73513
Exquisite packaging
Discount
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Experience top-tier performance with the HGTP5N120BND Single IGBT transistor from onsemi. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the HGTP5N120BND ensures energy efficiency and reliability. Trust onsemi's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Not For New Designs
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 21 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
- Power - Max: 167 W
- Switching Energy: 450µJ (on), 390µJ (off)
- Input Type: Standard
- Gate Charge: 53 nC
- Td (on/off) @ 25°C: 22ns/160ns
- Test Condition: 960V, 5A, 25Ohm, 15V
- Reverse Recovery Time (trr): 65 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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