SH8J31GZETB
Rohm Semiconductor
Rohm Semiconductor
60V PCH+PCH MIDDLE POWER MOSFET
$1.84
Available to order
Reference Price (USD)
2,500+
$0.69020
Exquisite packaging
Discount
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The SH8J31GZETB by Rohm Semiconductor is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the SH8J31GZETB provides reliable operation under stringent conditions. Rohm Semiconductor's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 70mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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