SH8MA2GZETB
Rohm Semiconductor

Rohm Semiconductor
SH8MA2 IS A POWER MOSFET WITH LO
$0.78
Available to order
Reference Price (USD)
1+
$0.78000
500+
$0.7722
1000+
$0.7644
1500+
$0.7566
2000+
$0.7488
2500+
$0.741
Exquisite packaging
Discount
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The SH8MA2GZETB by Rohm Semiconductor is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the SH8MA2GZETB offers superior functionality and longevity. Trust Rohm Semiconductor to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 4.5A, 10V, 82mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 15V, 305pF @ 15V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP