SI2337DS-T1-BE3
Vishay Siliconix
Vishay Siliconix
P-CHANNEL 80-V (D-S) MOSFET
$1.05
Available to order
Reference Price (USD)
1+
$1.05000
500+
$1.0395
1000+
$1.029
1500+
$1.0185
2000+
$1.008
2500+
$0.9975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI2337DS-T1-BE3 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Diodes Incorporated
DMP2110UQ-7
Rectron USA
RM6N100S4V
Diodes Incorporated
ZXMN6A08GQTA
IXYS
IXTA15N50L2-TRL
Fairchild Semiconductor
ISL9N312AS3ST
Renesas Electronics America Inc
2SK1636L-E
NXP USA Inc.
BUK9609-55A,118
Vishay Siliconix
SIHB33N60EF-GE3
Rohm Semiconductor
RYC002N05T316
Toshiba Semiconductor and Storage