SI3529DV-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 40V 2.5A 6-TSOP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the high-performance SI3529DV-T1-GE3 from Vishay Siliconix, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the SI3529DV-T1-GE3 delivers unmatched performance. Trust Vishay Siliconix's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Obsolete
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
- Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
Related Products
onsemi
FDZ1416NZ
Infineon Technologies
IPB080N03LG
Alpha & Omega Semiconductor Inc.
AO4807_101
Vishay Siliconix
SI4941EDY-T1-E3
onsemi
MCH6660-TL-W
Vishay Siliconix
SI6544BDQ-T1-E3
onsemi
NTGD4161PT1G
Vishay Siliconix
SI1988DH-T1-GE3
Infineon Technologies
BSL306NH6327XTSA1
Infineon Technologies