SI4114DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 20A 8SO
$1.40
Available to order
Reference Price (USD)
2,500+
$0.52300
5,000+
$0.49844
12,500+
$0.48090
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI4114DY-T1-GE3 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Infineon Technologies
IPB65R065C7ATMA2
Vishay Siliconix
IRL640PBF
Alpha & Omega Semiconductor Inc.
AOY423
Taiwan Semiconductor Corporation
TSM80N1R2CH C5G
Infineon Technologies
IPP120P04P4L03AKSA1
Infineon Technologies
IRL40B212
Vishay Siliconix
SUP85N15-21-E3
IXYS
IXFH94N30P3
onsemi
NTLUS4930NTAG
Vishay Siliconix